IRFI540NPBF

Specifications

Kılıf / Paket

TO-220-3 Full Pack

Gate Charge Qg Max Vgs

94nC @ 10V

Turn On Delay Time

8.2 ns

Uzunluk

10.6172mm

Dual Supply Voltage

100V

Vgsth Max Id

4V @ 250μA

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tube

Kurşunsuz

Lead Free

Recovery Time

250 ns

Number Of Elements

1

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

44 ns

Yayın Yılı

1998

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Threshold Voltage

4V

Power Dissipation

42W

Genişlik

4.826mm

Terminal

Through Hole

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Akım Değeri

20A

ECCN Kodu

EAR99

Isolation Voltage

2.5kV

Rds On Max Id Vgs

52m Ω @ 11A, 10V

Drain To Source Breakdown Voltage

100V

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Current Continuous Drain Id25

20A Tc

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1400pF @ 25V