Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pulsed Drain Currentmax Idm
- 290A
- Reach Svhc
- No SVHC
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- ISOLATED
- Input Capacitance Ciss Max Vds
- 9540pF @ 50V
- Fabrika Tedarik Süresi
- 12 Weeks
- Fall Time Typ
- 71 ns
- Element Configuration
- Single
- Power Dissipation Max
- 61W Tc
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rise Time
- 58ns
- Yükseklik
- 16.13mm
- Continuous Drain Current Id
- 72A
- Terminal
- Through Hole
- Seri
- HEXFET®
- Power Dissipation
- 61W
- Genişlik
- 4.83mm
- Threshold Voltage
- 4V
- Transistor Element Material
- SILICON
- Current Continuous Drain Id25
- 72A Tc
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 4.5m Ω @ 43A, 10V
- Drain To Source Breakdown Voltage
- 100V
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Parça Durumu
- Active
- Transistor Application
- SWITCHING
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2008
- Nominal Vgs
- 4 V
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