IRFI1010NPBF

Specifications

Power Dissipation

47W

Genişlik

4.826mm

Seri

HEXFET®

Threshold Voltage

4V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

49A Tc

Rds On Max Id Vgs

12m Ω @ 26A, 10V

Drain To Source Breakdown Voltage

55V

Jedec95 Code

TO-220AB

Operating Mode

ENHANCEMENT MODE

Akım Değeri

49A

ECCN Kodu

EAR99

Pin Sayısı

3

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

290A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Fabrika Tedarik Süresi

14 Weeks

Input Capacitance Ciss Max Vds

2900pF @ 25V

Fall Time Typ

46 ns

Element Configuration

Single

Voltage Rated Dc

55V

Gate To Source Voltage Vgs

20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Through Hole

Power Dissipation Max

58W Tc

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yükseklik

9.8mm

Continuous Drain Current Id

49A

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

66ns

Direnç

12mOhm

Kılıf / Paket

TO-220-3 Full Pack

Uzunluk

10.6172mm

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

11 ns

Gate Charge Qg Max Vgs

130nC @ 10V