IRFHS8342TRPBF

Specifications

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

16m Ω @ 8.5A, 10V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

8.8A Ta 19A Tc

Turn On Delay Time

5.9 ns

Pin Sayısı

6

Gate Charge Qg Max Vgs

8.7nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Vgsth Max Id

2.35V @ 25μA

Operating Mode

ENHANCEMENT MODE

Seri

HEXFET®

Power Dissipation

2.1W

Kılıf / Paket

6-PowerVDFN

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Direnç

16MOhm

Threshold Voltage

1.8V

Drain Currentmax Abs Id

8.5A

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

5.2 ns

Fall Time Typ

5 ns

Nominal Vgs

1.8 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Montaj Tipi

Surface Mount

Rise Time

15ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Continuous Drain Current Id

8.8A

Montaj

Surface Mount

Terminal Sayısı

6

Fet Type

N-Channel

Power Dissipation Max

2.1W Ta

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Number Of Elements

1