IRFHS8242TR2PBF

Specifications

Min. Çalışma Sıcaklığı

-55°C

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Input Capacitance

653pF

Reach Svhc

No SVHC

Recovery Time

17 ns

Max Power Dissipation

2.1W

Input Capacitance Ciss Max Vds

653pF @ 10V

Turn Off Delay Time

5.4 ns

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Montaj Tipi

Surface Mount

Nominal Vgs

1.8 V

Fall Time Typ

5.3 ns

Yükseklik

950μm

Continuous Drain Current Id

9.9A

Rise Time

19ns

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Montaj

Surface Mount

Genişlik

2.1mm

Power Dissipation

2.1W

Seri

HEXFET®

Tedarikçi Cihaz Paketi

6-PQFN (2x2)

Kılıf / Paket

6-PowerVDFN

Drain To Source Resistance

13mOhm

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

25V

Rds On Max Id Vgs

13mOhm @ 8.5A, 10V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

9.9A Ta 21A Tc

RoHS Durumu

RoHS Compliant

Rds On Max

13 mΩ

Gate Charge Qg Max Vgs

10.4nC @ 10V

Turn On Delay Time

6.5 ns

Pin Sayısı

6

Drain To Source Voltage Vdss

25V

Uzunluk

2.1mm

Vgsth Max Id

2.35V @ 25μA