IRFHM9391TRPBF

Specifications

Power Dissipation

2.6W

Seri

HEXFET®

Threshold Voltage

-1.8V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

11A Ta

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

14.6m Ω @ 11A, 10V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

ECCN Kodu

EAR99

Terminal Formu

FLAT

Pin Sayısı

8

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

90A

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

10 Weeks

Input Capacitance Ciss Max Vds

1543pF @ 25V

Fall Time Typ

60 ns

Gate To Source Voltage Vgs

25V

Montaj

Surface Mount

Terminal Sayısı

5

Power Dissipation Max

2.6W Ta

Number Of Channels

1

Continuous Drain Current Id

11A

Drainsource On Resistancemax

0.0225Ohm

Rise Time

27ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Jesd30 Code

S-PDSO-F5

Kılıf / Paket

8-PowerTDFN

Vgsth Max Id

2.4V @ 25μA

Turn On Delay Time

11 ns

Gate Charge Qg Max Vgs

16nC @ 10V

Kurşunsuz

Lead Free

Number Of Elements

1

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete