IRFHM9331TRPBF

Specifications

Vgsth Max Id

2.4V @ 25μA

Uzunluk

2.9972mm

Turn On Delay Time

11 ns

Gate Charge Qg Max Vgs

48nC @ 10V

Direnç

14.6MOhm

Jesd30 Code

S-PDSO-N5

Kılıf / Paket

8-PowerTDFN

Fet Type

P-Channel

Avalanche Energy Rating Eas

76 mJ

Vgs Max

±25V

Yayın Yılı

2009

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

24A

Turn Off Delay Time

72 ns

Terminal Pozisyonu

DUAL

Number Of Elements

1

Kurşunsuz

Lead Free

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

11A Ta 24A Tc

Radyasyon Dayanımı

No

Rds On Max Id Vgs

10m Ω @ 11A, 20V

Max Junction Temperature Tj

150°C

Drain To Source Breakdown Voltage

-30V

Threshold Voltage

-1.8V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Seri

HEXFET®

Genişlik

2.9972mm

Power Dissipation

2.8W

Montaj

Surface Mount

Number Of Channels

1