IRFHM8334TRPBF

Specifications

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

Number Of Elements

1

Terminal Pozisyonu

DUAL

Drain Currentmax Abs Id

25A

Turn Off Delay Time

7 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Vgs Max

±20V

Avalanche Energy Rating Eas

35 mJ

Fet Type

N-Channel

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-F5

Turn On Delay Time

8.3 ns

Gate Charge Qg Max Vgs

15nC @ 10V

Ds Breakdown Voltagemin

30V

Vgsth Max Id

2.35V @ 25μA

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

17 Weeks

Input Capacitance Ciss Max Vds

1180pF @ 10V

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

4.6 ns

Continuous Drain Current Id

13A

Drainsource On Resistancemax

0.009Ohm

Rise Time

14ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Terminal Sayısı

5

Power Dissipation Max

2.7W Ta 28W Tc

Number Of Channels

1

Power Dissipation

2.7W

Seri

HEXFET®

Transistor Element Material

SILICON

Threshold Voltage

1.8V