IRFHM8330TRPBF

Specifications

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

1450pF @ 25V

Fabrika Tedarik Süresi

17 Weeks

Number Of Elements

1

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Terminal Sayısı

5

Fet Type

N-Channel

Number Of Channels

1

Power Dissipation Max

2.7W Ta 33W Tc

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

42 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

15ns

Drainsource On Resistancemax

0.0066Ohm

Continuous Drain Current Id

16A

Vgs Max

±20V

Fall Time Typ

5.7 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

10 ns

Drain Currentmax Abs Id

55A

Jesd30 Code

S-PDSO-F5

Threshold Voltage

1.8V

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerTDFN

Seri

HEXFET®

Power Dissipation

2.7W

Vgsth Max Id

2.35V @ 25μA

Terminal Formu

FLAT

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE