IRFHM8329TRPBF

Specifications

Ambalaj

Tape & Reel (TR)

Parça Durumu

Not For New Designs

Transistor Application

SWITCHING

Number Of Elements

1

Pulsed Drain Currentmax Idm

230A

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

1710pF @ 10V

Fabrika Tedarik Süresi

39 Weeks

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Pozisyonu

DUAL

Turn Off Delay Time

14 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

14 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

74ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

43 mJ

Vgs Max

±20V

Continuous Drain Current Id

16A

Power Dissipation Max

2.6W Ta 33W Tc

Fet Type

N-Channel

Terminal Sayısı

5

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Seri

HEXFET®

Power Dissipation

2.6W

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-F5

Threshold Voltage

1.7V

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

6.1m Ω @ 20A, 10V

Current Continuous Drain Id25

16A Ta 57A Tc

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

26nC @ 10V