IRFHM8326TRPBF

Specifications

Seri

HEXFET®

Power Dissipation

2.8W

Jesd30 Code

S-PDSO-F5

Threshold Voltage

1.7V

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

19A Ta

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

4.7m Ω @ 20A, 10V

ECCN Kodu

EAR99

Terminal Formu

FLAT

Vgsth Max Id

2.2V @ 50μA

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

12 ns

Pin Sayısı

8

Gate Charge Qg Max Vgs

39nC @ 10V

Number Of Elements

1

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Parça Durumu

Active

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Case Connection

DRAIN

Terminal Pozisyonu

DUAL

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

2496pF @ 10V

Fall Time Typ

12 ns

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

70A

Turn Off Delay Time

18 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Surface Mount

Fet Type

N-Channel

Terminal Sayısı

5

Power Dissipation Max

2.8W Ta 37W Tc