IRFHM831TR2PBF

Specifications

Turn Off Delay Time

6.2 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Nominal Vgs

1.8 V

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Fall Time Typ

4.7 ns

Yükseklik

990.6μm

Continuous Drain Current Id

14A

Rise Time

12ns

Avalanche Energy Rating Eas

50 mJ

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Fet Type

N-Channel

Terminal Sayısı

5

Min. Çalışma Sıcaklığı

-55°C

Transistor Application

SWITCHING

Ambalaj

Cut Tape (CT)

Parça Durumu

Obsolete

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

96A

Recovery Time

22 ns

Number Of Elements

1

Max Power Dissipation

2.5W

Input Capacitance Ciss Max Vds

1050pF @ 25V

Terminal Pozisyonu

DUAL

Case Connection

DRAIN

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

7.8m Ω @ 12A, 10V

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

14A Ta 40A Tc

Turn On Delay Time

6.9 ns

Pin Sayısı

8

Gate Charge Qg Max Vgs

16nC @ 10V

Uzunluk

3.2766mm

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Vgsth Max Id

2.35V @ 25μA