IRFHM4231TRPBF

Specifications

Ds Breakdown Voltagemin

25V

Gate Charge Qg Max Vgs

20nC @ 10V

Turn On Delay Time

8.7 ns

Vgsth Max Id

2.1V @ 35μA

Uzunluk

3.3mm

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-N5

Turn Off Delay Time

12 ns

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Contact Plating

Tin

Avalanche Energy Rating Eas

42 mJ

Vgs Max

±20V

Fet Type

N-Channel

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Number Of Elements

1

Kurşunsuz

Lead Free

Terminal Pozisyonu

DUAL

Radyasyon Dayanımı

No

Rds On Max Id Vgs

3.4m Ω @ 30A, 10V

Current Continuous Drain Id25

40A Tc

RoHS Durumu

RoHS Compliant

Pin Sayısı

8

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

25V

Seri

HEXFET®

Genişlik

5mm

Transistor Element Material

SILICON

Threshold Voltage

1.6V

Element Configuration

Single

Fall Time Typ

5.9 ns

Temel Parça No

IRFHM4231

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

28ns

Drainsource On Resistancemax

0.0046Ohm

Yükseklik

900μm