IRFH8337TRPBF

Specifications

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

12A Ta 35A Tc

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

12.8m Ω @ 16.2A, 10V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Terminal Formu

FLAT

Vgsth Max Id

2.35V @ 25μA

Turn On Delay Time

6.4 ns

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

10nC @ 10V

Power Dissipation

3.2W

Seri

HEXFET®

Jesd30 Code

R-PDSO-F5

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

Nominal Vgs

1.8 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Fall Time Typ

4.1 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

5.7 ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Power Dissipation Max

3.2W Ta 27W Tc

Fet Type

N-Channel

Terminal Sayısı

5

Continuous Drain Current Id

12A

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

12ns

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

65A

Number Of Elements

1

Transistor Application

SWITCHING