Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- FASTIRFET™, HEXFET®
- Jesd30 Code
- R-PDSO-N5
- Direnç
- 17mOhm
- Kılıf / Paket
- 8-PowerTDFN
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Current Continuous Drain Id25
- 11A Ta 35A Tc
- Rds On Max Id Vgs
- 16.4m Ω @ 21A, 10V
- ECCN Kodu
- EAR99
- Terminal Formu
- NO LEAD
- Vgsth Max Id
- 3.6V @ 50μA
- Drain To Source Voltage Vdss
- 100V
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Ds Breakdown Voltagemin
- 100V
- Pulsed Drain Currentmax Idm
- 140A
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Pozisyonu
- DUAL
- Input Capacitance Ciss Max Vds
- 733pF @ 50V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2013
- Montaj Tipi
- Surface Mount
- Drain Currentmax Abs Id
- 11A
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Power Dissipation Max
- 3.6W Ta 39W Tc
- Fet Type
- N-Channel
- Terminal Sayısı
- 5
- Avalanche Energy Rating Eas
- 220 mJ
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Vgs Max
- ±20V
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