IRFH7185TRPBF

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

2320pF @ 50V

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

260A

Gate To Source Voltage Vgs

20V

Number Of Channels

1

Power Dissipation Max

3.6W Ta 160W Tc

Terminal Sayısı

5

Montaj

Surface Mount

Continuous Drain Current Id

19A

Yükseklik

950μm

Rise Time

9.9ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.0052Ohm

Temel Parça No

IRFH7185

Fall Time Typ

3.9 ns

Element Configuration

Single

Threshold Voltage

3.6V

Transistor Element Material

SILICON

Power Dissipation

3.6W

Genişlik

5.15mm

Seri

FASTIRFET™, HEXFET®

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pin Sayısı

8

Current Continuous Drain Id25

19A Ta

RoHS Durumu

RoHS Compliant

Rds On Max Id Vgs

5.2m Ω @ 50A, 10V

Max Junction Temperature Tj

150°C

Drain To Source Breakdown Voltage

100V

Radyasyon Dayanımı

No

Terminal Pozisyonu

DUAL

Kurşunsuz

Lead Free

Number Of Elements

1

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Fet Type

N-Channel