Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-VQFN Exposed Pad
- Transistor Element Material
- SILICON
- Threshold Voltage
- 3V
- Genişlik
- 5mm
- Power Dissipation
- 156W
- Seri
- HEXFET®, StrongIRFET™
- Pin Sayısı
- 5
- Turn On Delay Time
- 15 ns
- Gate Charge Qg Max Vgs
- 194nC @ 10V
- Ds Breakdown Voltagemin
- 40V
- Uzunluk
- 6mm
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 40V
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 3.9V @ 150μA
- Rds On Max Id Vgs
- 1.4m Ω @ 100A, 10V
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 100A Tc
- Input Capacitance Ciss Max Vds
- 6419pF @ 25V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Pozisyonu
- DUAL
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz
- Lead Free
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Continuous Drain Current Id
- 100A
- Vgs Max
- ±20V
- Yükseklik
- 850μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 51ns
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Surface Mount
- Power Dissipation Max
- 156W Tc
- Fet Type
- N-Channel
- Terminal Sayısı
- 5
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