IRFH5304TR2PBF

Specifications

Reach Svhc

No SVHC

Recovery Time

29 ns

Number Of Elements

1

Max Power Dissipation

3.6W

Min. Çalışma Sıcaklığı

-55°C

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Input Capacitance

1.65nF

Input Capacitance Ciss Max Vds

2360pF @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Montaj Tipi

Surface Mount

Nominal Vgs

2.35 V

Fall Time Typ

6.6 ns

Turn Off Delay Time

12 ns

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Montaj

Surface Mount

Yükseklik

810μm

Continuous Drain Current Id

79A

Rise Time

25ns

Genişlik

5.0038mm

Power Dissipation

46W

Seri

HEXFET®

Threshold Voltage

2.35V

Drain To Source Resistance

4.5mOhm

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Kılıf / Paket

8-PowerVDFN

Current Continuous Drain Id25

22A Ta 79A Tc

RoHS Durumu

RoHS Compliant

Rds On Max

4 mΩ

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

4.5mOhm @ 47A, 10V

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

30V

Uzunluk

5mm

Vgsth Max Id

2.35V @ 50μA

Gate Charge Qg Max Vgs

41nC @ 10V