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Same-day dispatch from stock
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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 32A Ta 100A Tc
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 30V
- Rds On Max Id Vgs
- 2.1m Ω @ 50A, 10V
- Radyasyon Dayanımı
- No
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 5.9944mm
- Vgsth Max Id
- 2.35V @ 100μA
- ECCN Kodu
- EAR99
- Gate Charge Qg Max Vgs
- 76nC @ 10V
- Pin Sayısı
- 8
- Turn On Delay Time
- 18 ns
- Genişlik
- 5mm
- Power Dissipation
- 100W
- Seri
- HEXFET®
- Jesd30 Code
- R-PDSO-N5
- Direnç
- 2.1MOhm
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-PowerVDFN
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2009
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Nominal Vgs
- 1.8 V
- Fall Time Typ
- 18 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Turn Off Delay Time
- 22 ns
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 5
- Fet Type
- N-Channel
- Power Dissipation Max
- 3.6W Ta 100W Tc
- Montaj
- Surface Mount
- Continuous Drain Current Id
- 32A
- Vgs Max
- ±20V
- Yükseklik
- 838.2μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 51ns
- Kurşunsuz
- Lead Free
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Pulsed Drain Currentmax Idm
- 400A
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