IRFH5302TR2PBF

Specifications

Tedarikçi Cihaz Paketi

PQFN (5x6) Single Die

Kılıf / Paket

8-PowerVDFN

Threshold Voltage

1.8V

Drain To Source Resistance

2.1mOhm

Genişlik

6mm

Power Dissipation

100W

Seri

HEXFET®

Pin Sayısı

8

Turn On Delay Time

18 ns

Gate Charge Qg Max Vgs

76nC @ 10V

Uzunluk

5mm

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.35V @ 100μA

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

2.1mOhm @ 50A, 10V

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

32A Ta 100A Tc

Rds On Max

2.1 mΩ

Input Capacitance Ciss Max Vds

4400pF @ 15V

Min. Çalışma Sıcaklığı

-55°C

Input Capacitance

4.4nF

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Max Power Dissipation

3.6W

Number Of Elements

1

Recovery Time

29 ns

Continuous Drain Current Id

100A

Yükseklik

810μm

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

51ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Fet Type

N-Channel

Element Configuration

Single

Turn Off Delay Time

22 ns

Nominal Vgs

1.8 V