IRFH5302DTRPBF

Specifications

Jesd30 Code

R-PDSO-N5

Direnç

2.5MOhm

Kılıf / Paket

8-PowerVDFN

Vgsth Max Id

2.35V @ 100μA

Uzunluk

5.9944mm

Gate Charge Qg Max Vgs

55nC @ 10V

Turn On Delay Time

16 ns

Terminal Pozisyonu

DUAL

Number Of Elements

1

Kurşunsuz

Lead Free

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Transistor Application

SWITCHING

Fet Type

N-Channel

Vgs Max

±20V

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Turn Off Delay Time

20 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Abs Id

29A

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Seri

HEXFET®

Power Dissipation

3.6W

Genişlik

5mm

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Current Continuous Drain Id25

29A Ta 100A Tc

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

2.5m Ω @ 50A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

3635pF @ 25V

Pulsed Drain Currentmax Idm

400A