IRFH5302DTR2PBF

Specifications

Rise Time

30ns

Continuous Drain Current Id

100A

Yükseklik

838.2μm

Fet Type

N-Channel

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

20 ns

Element Configuration

Single

Fall Time Typ

12 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2010

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

2.35 V

Input Capacitance Ciss Max Vds

3635pF @ 25V

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Input Capacitance

3.635nF

Min. Çalışma Sıcaklığı

-55°C

Recovery Time

29 ns

Number Of Elements

1

Max Power Dissipation

3.6W

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

55nC @ 10V

Pin Sayısı

8

Turn On Delay Time

16 ns

Vgsth Max Id

2.35V @ 100μA

Drain To Source Voltage Vdss

30V

Uzunluk

5.9944mm

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

2.5mOhm @ 50A, 10V

Maks. Çalışma Sıcaklığı

150°C

Rds On Max

2.5 mΩ

Current Continuous Drain Id25

29A Ta 100A Tc

RoHS Durumu

RoHS Compliant

Kılıf / Paket

8-PowerVDFN

Tedarikçi Cihaz Paketi

PQFN (5x6) Single Die

Drain To Source Resistance

2.5mOhm

Threshold Voltage

2.35V

Seri

HEXFET®