Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 5
- Power Dissipation Max
- 3.6W Ta 156W Tc
- Montaj
- Surface Mount
- Continuous Drain Current Id
- 100A
- Yükseklik
- 838.2μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 72ns
- Fall Time Typ
- 24 ns
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 6115pF @ 13V
- Pulsed Drain Currentmax Idm
- 400A
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 40A Ta 100A Tc
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 25V
- Rds On Max Id Vgs
- 1.4m Ω @ 50A, 10V
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Power Dissipation
- 3.6W
- Genişlik
- 5mm
- Seri
- HEXFET®
- Fet Type
- N-Channel
- Vgs Max
- ±20V
- Avalanche Energy Rating Eas
- 470 mJ
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2010
- Turn Off Delay Time
- 23 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Drain Currentmax Abs Id
- 40A
- Terminal Pozisyonu
- DUAL
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
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