IRFH5250DTR2PBF

Specifications

Rds On Max

1.4 mΩ

Current Continuous Drain Id25

40A Ta 100A Tc

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Rds On Max Id Vgs

1.4mOhm @ 50A, 10V

Drain To Source Breakdown Voltage

25V

Maks. Çalışma Sıcaklığı

150°C

Vgsth Max Id

2.35V @ 150μA

Drain To Source Voltage Vdss

25V

Uzunluk

5.9944mm

Gate Charge Qg Max Vgs

83nC @ 10V

Pin Sayısı

8

Turn On Delay Time

23 ns

Seri

HEXFET®

Genişlik

5mm

Power Dissipation

250W

Drain To Source Resistance

2.2mOhm

Threshold Voltage

1.8V

Kılıf / Paket

8-PowerVDFN

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Fall Time Typ

24 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Montaj Tipi

Surface Mount

Nominal Vgs

1.8 V

Turn Off Delay Time

23 ns

Fet Type

N-Channel

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Rise Time

72ns

Continuous Drain Current Id

100A

Yükseklik

838.2μm

Max Power Dissipation

3.6W

Number Of Elements

1

Recovery Time

41 ns

Reach Svhc

No SVHC

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Input Capacitance

706pF

Min. Çalışma Sıcaklığı

-55°C