IRFH5220TRPBF

Specifications

Input Capacitance Ciss Max Vds

1380pF @ 50V

Terminal Pozisyonu

DUAL

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

47A

Number Of Elements

1

Continuous Drain Current Id

3.8A

Vgs Max

±20V

Drainsource On Resistancemax

0.0999Ohm

Avalanche Energy Rating Eas

290 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

4.7ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Power Dissipation Max

3.6W Ta 8.3W Tc

Fet Type

N-Channel

Terminal Sayısı

5

Drain Currentmax Abs Id

20A

Turn Off Delay Time

14 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Montaj Tipi

Surface Mount

Fall Time Typ

3.4 ns

Kılıf / Paket

8-VQFN Exposed Pad

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-N5

Power Dissipation

3.6W

Seri

HEXFET®

Turn On Delay Time

7.2 ns

Pin Sayısı

8

Gate Charge Qg Max Vgs

30nC @ 10V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 100μA

Rds On Max Id Vgs

99.9m Ω @ 5.8A, 10V

Drain To Source Breakdown Voltage

200V