IRFH5215TRPBF

Specifications

Fall Time Typ

2.9 ns

Gate To Source Voltage Vgs

20V

Terminal Sayısı

5

Power Dissipation Max

3.6W Ta 104W Tc

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Continuous Drain Current Id

5A

Tepe Reflow Sıcaklığı (°C)

260

Rise Time

6.3ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

1350pF @ 50V

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

5A Ta 27A Tc

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

150V

Rds On Max Id Vgs

58m Ω @ 16A, 10V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Power Dissipation

104W

Seri

HEXFET®

Threshold Voltage

5V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2004

Nominal Vgs

5 V

Turn Off Delay Time

11 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Abs Id

5A

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

96 mJ

Kurşunsuz

Lead Free