IRFH5210TR2PBF

Specifications

Input Capacitance

2.57nF

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Min. Çalışma Sıcaklığı

-55°C

Max Power Dissipation

3.6W

Recovery Time

44 ns

Number Of Elements

1

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

2570pF @ 25V

Element Configuration

Single

Turn Off Delay Time

21 ns

Fall Time Typ

6.5 ns

Nominal Vgs

2 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Rise Time

9.7ns

Yükseklik

838.2μm

Continuous Drain Current Id

100A

Montaj

Surface Mount

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Seri

HEXFET®

Power Dissipation

3.6W

Genişlik

5mm

Kılıf / Paket

8-PowerVDFN

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Drain To Source Resistance

14.9mOhm

Direnç

14.9MOhm

Threshold Voltage

2V

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

14.9mOhm @ 33A, 10V

Rds On Max

14.9 mΩ

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

10A Ta 55A Tc

Turn On Delay Time

7.2 ns

Pin Sayısı

8