Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- RoHS Compliant
- Current Continuous Drain Id25
- 13A Ta 71A Tc
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- 75V
- Rds On Max Id Vgs
- 9.6m Ω @ 43A, 10V
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4V @ 100μA
- Uzunluk
- 5.9944mm
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 7.2 ns
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 59nC @ 10V
- Seri
- HEXFET®
- Power Dissipation
- 3.6W
- Genişlik
- 5mm
- Direnç
- 9.6MOhm
- Jesd30 Code
- R-PDSO-N5
- Kılıf / Paket
- 8-PowerVDFN
- Transistor Element Material
- SILICON
- Fall Time Typ
- 7.1 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2010
- Montaj Tipi
- Surface Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Turn Off Delay Time
- 20 ns
- Montaj
- Surface Mount
- Fet Type
- N-Channel
- Terminal Sayısı
- 5
- Power Dissipation Max
- 3.6W Ta 105W Tc
- Gate To Source Voltage Vgs
- 20V
- Contact Plating
- Tin
- Rise Time
- 12ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yükseklik
- 838.2μm
- Vgs Max
- ±20V
- Continuous Drain Current Id
- 71A
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Obsolete
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors