IRFH5110TRPBF

Specifications

Gate To Source Voltage Vgs

20V

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Power Dissipation Max

3.6W Ta 114W Tc

Terminal Sayısı

5

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

63A

Yükseklik

838.2μm

Rise Time

9.6ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

6.4 ns

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

3152pF @ 25V

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

252A

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

11A Ta 63A Tc

Rds On Max Id Vgs

12.4m Ω @ 37A, 10V

Drain To Source Breakdown Voltage

100V

Radyasyon Dayanımı

No

Threshold Voltage

4V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Genişlik

5mm

Power Dissipation

3.6W

Seri

HEXFET®

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

93 mJ

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

22 ns