IRFH5106TRPBF

Specifications

Input Capacitance Ciss Max Vds

3090pF @ 25V

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

400A

Continuous Drain Current Id

100A

Yükseklik

838.2μm

Tepe Reflow Sıcaklığı (°C)

260

Rise Time

13ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.0056Ohm

Gate To Source Voltage Vgs

20V

Terminal Sayısı

5

Power Dissipation Max

3.6W Ta 114W Tc

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Fall Time Typ

9.5 ns

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Threshold Voltage

2V

Power Dissipation

114W

Genişlik

5mm

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Rds On Max Id Vgs

5.6m Ω @ 50A, 10V

Drain To Source Breakdown Voltage

60V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

21A Ta 100A Tc

RoHS Durumu

RoHS Compliant

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

Number Of Elements

1

Vgs Max

±20V

Avalanche Energy Rating Eas

96 mJ