IRFH5104TR2PBF

Specifications

Rds On Max

3.5 mΩ

Current Continuous Drain Id25

24A Ta 100A Tc

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

40V

Rds On Max Id Vgs

3.5mOhm @ 50A, 10V

Vgsth Max Id

4V @ 100μA

Drain To Source Voltage Vdss

40V

Uzunluk

6mm

Gate Charge Qg Max Vgs

80nC @ 10V

Turn On Delay Time

9.5 ns

Pin Sayısı

8

Seri

HEXFET®

Power Dissipation

114W

Genişlik

5mm

Drain To Source Resistance

3.5mOhm

Direnç

3.5MOhm

Threshold Voltage

4V

Kılıf / Paket

8-VQFN Exposed Pad

Tedarikçi Cihaz Paketi

PQFN (5x6)

Fall Time Typ

10 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Montaj Tipi

Surface Mount

Nominal Vgs

4 V

Turn Off Delay Time

20 ns

Power Dissipation Max

3.6W Ta 114W Tc

Fet Type

N-Channel

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Rise Time

15ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

900μm

Vgs Max

±20V

Continuous Drain Current Id

24A

Number Of Elements

1

Recovery Time

47 ns

Reach Svhc

No SVHC

Kurşunsuz

Lead Free