IRFH5053TRPBF

Specifications

Uzunluk

5.9944mm

Vgsth Max Id

4.9V @ 100μA

Turn On Delay Time

8.6 ns

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

36nC @ 10V

Jesd30 Code

R-PDSO-N3

Kılıf / Paket

8-PowerVDFN

Nominal Vgs

3.7 V

Yayın Yılı

2005

Nem Hassasiyeti (MSL)

2 (1 Year)

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

9.3A

Turn Off Delay Time

18 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Vgs Max

±20V

Kurşunsuz

Lead Free

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

9.3A Ta 46A Tc

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

18m Ω @ 9.3A, 10V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

Genişlik

5mm

Power Dissipation

3.1W

Seri

HEXFET®

Threshold Voltage

3.7V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Fall Time Typ

9.9 ns

Gate To Source Voltage Vgs

20V

Tepe Reflow Süresi (maks. sn)

30