IRFH5025TR2PBF

Specifications

Genişlik

5mm

Power Dissipation

3.6W

Seri

HEXFET®

Threshold Voltage

20V

Drain To Source Resistance

100mOhm

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Kılıf / Paket

8-PowerVDFN

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

3.8A Ta

Rds On Max

100 mΩ

Rds On Max Id Vgs

100mOhm @ 5.7A, 10V

Drain To Source Breakdown Voltage

250V

Maks. Çalışma Sıcaklığı

150°C

Radyasyon Dayanımı

No

Uzunluk

5.9944mm

Drain To Source Voltage Vdss

250V

Vgsth Max Id

5V @ 150μA

Pin Sayısı

8

Turn On Delay Time

9 ns

Gate Charge Qg Max Vgs

56nC @ 10V

Reach Svhc

No SVHC

Max Power Dissipation

3.6W

Recovery Time

83 ns

Number Of Elements

1

Min. Çalışma Sıcaklığı

-55°C

Input Capacitance

2.15nF

Parça Durumu

Obsolete

Ambalaj

Cut Tape (CT)

Input Capacitance Ciss Max Vds

2150pF @ 50V

Nominal Vgs

20 V

Montaj Tipi

Surface Mount

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

6.1 ns

Element Configuration

Single

Turn Off Delay Time

17 ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Fet Type

N-Channel

Continuous Drain Current Id

32A