IRFH5004TRPBF

Specifications

Fall Time Typ

16 ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Terminal Sayısı

5

Power Dissipation Max

3.6W Ta 156W Tc

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

100A

Yükseklik

838.2μm

Drainsource On Resistancemax

0.0026Ohm

Rise Time

39ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

400A

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

4490pF @ 20V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

28A Ta 100A Tc

Rds On Max Id Vgs

2.6m Ω @ 50A, 10V

Drain To Source Breakdown Voltage

40V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

Genişlik

5mm

Power Dissipation

3.6W

Seri

HEXFET®

Threshold Voltage

4V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Nominal Vgs

4 V

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

28 ns

Fet Type

N-Channel