IRFH3707TRPBF

Specifications

Uzunluk

3mm

Vgsth Max Id

2.35V @ 25μA

Turn On Delay Time

7.8 ns

Gate Charge Qg Max Vgs

8.1nC @ 4.5V

Direnç

12.4MOhm

Jesd30 Code

S-PDSO-N3

Kılıf / Paket

8-PowerVDFN

Nominal Vgs

1.8 V

Yayın Yılı

2010

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

12A

Turn Off Delay Time

8.7 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

13 mJ

Kurşunsuz

Lead Free

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

12A Ta 29A Tc

Rds On Max Id Vgs

12.4m Ω @ 12A, 10V

Drain To Source Breakdown Voltage

30V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pin Sayısı

8

Genişlik

3mm

Power Dissipation

2.8W

Seri

HEXFET®

Threshold Voltage

1.8V

Transistor Element Material

SILICON

Fall Time Typ

9.7 ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Power Dissipation Max

2.8W Ta