Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Fall Time Typ
- 110 ns
- Additional Feature
- HIGH RELIABILITY
- ECCN Kodu
- EAR99
- Power Dissipation
- 330W
- Kurşunsuz
- Lead Free
- Genişlik
- 5mm
- Montaj Tipi
- Through Hole
- Avalanche Energy Rating Eas
- 560 mJ
- Fet Type
- N-Channel
- Drive Voltage Max Rds On Min Rds On
- 10V
- Element Configuration
- Single
- Turn On Delay Time
- 13 ns
- Yükseklik
- 15mm
- Case Connection
- DRAIN
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Uzunluk
- 10.9982mm
- Vgs Max
- ±20V
- Power Dissipation Max
- 330W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Number Of Elements
- 1
- Vgsth Max Id
- 4V @ 250μA
- Akım Değeri
- 174A
- Yayın Yılı
- 2002
- Seri
- HEXFET®
- Voltage Rated Dc
- 55V
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-273AA
- Terminal Sayısı
- 3
- Direnç
- 5MOhm
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Breakdown Voltage
- 55V
- Input Capacitance Ciss Max Vds
- 5480pF @ 25V
- Turn Off Delay Time
- 130 ns
- Gate Charge Qg Max Vgs
- 260nC @ 10V
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 174A Tc
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