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IRFBA1404PPBF

Infineon Technologies

IRFBA1404PPBF

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Uzunluk
10.9982mm
Avalanche Energy Rating Eas
480 mJ
Drive Voltage Max Rds On Min Rds On
10V
Yükseklik
15mm
Case Connection
DRAIN
Element Configuration
Single
Turn On Delay Time
17 ns
Power Dissipation
300W
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Rise Time
140ns
Montaj
Through Hole
Pin Sayısı
3
Continuous Drain Current Id
206A
Operating Mode
ENHANCEMENT MODE
Drain Currentmax Abs Id
95A
Terminal Sayısı
3
RoHS Durumu
ROHS3 Compliant
Voltage Rated Dc
40V
Çalışma Sıcaklığı
-40°C~175°C TJ
Gate To Source Voltage Vgs
20V
Input Capacitance Ciss Max Vds
7360pF @ 25V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
300W Tc
Yayın Yılı
2004
Akım Değeri
206A
Parça Durumu
Active
Transistor Element Material
SILICON
Vgs Max
±20V
Fet Type
N-Channel
Montaj Tipi
Through Hole
Genişlik
5mm
Kurşunsuz
Lead Free
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
12 Weeks
Fall Time Typ
26 ns
Rds On Max Id Vgs
3.7m Ω @ 95A, 10V
Current Continuous Drain Id25
206A Tc
Transistor Application
SWITCHING
Pulsed Drain Currentmax Idm
650A
Radyasyon Dayanımı
No

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