Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Channels
- 1
- Turn Off Delay Time
- 58 ns
- Gate Charge Qg Max Vgs
- 130nC @ 10V
- Input Capacitance Ciss Max Vds
- 4555pF @ 25V
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-220-3
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Weight
- 6.000006g
- Seri
- HEXFET®, StrongIRFET™
- Yayın Yılı
- 2008
- Drain To Source Voltage Vdss
- 60V
- Vgsth Max Id
- 3.7V @ 100μA
- Threshold Voltage
- 3.7V
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 160W Tc
- Continuous Drain Current Id
- 110A
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Ds Breakdown Voltagemin
- 60V
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 110A Tc
- Montaj
- Through Hole
- Rise Time
- 76ns
- Rds On Max Id Vgs
- 5.1m Ω @ 65A, 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kurşunsuz
- Lead Free
- Genişlik
- 4.83mm
- Jedec95 Code
- TO-220AB
- ECCN Kodu
- EAR99
- Fall Time Typ
- 56 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Vgs Max
- ±20V
- Uzunluk
- 10.67mm
- Transistor Element Material
- SILICON
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