IRFB7537PBF

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Genişlik

4.83mm

Kurşunsuz

Lead Free

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fall Time Typ

84 ns

Fabrika Tedarik Süresi

12 Weeks

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Type

N-Channel

Montaj Tipi

Through Hole

Number Of Channels

1

Gate Charge Qg Max Vgs

210nC @ 10V

Turn Off Delay Time

82 ns

Drain To Source Breakdown Voltage

60V

Kılıf / Paket

TO-220-3

Seri

HEXFET®, StrongIRFET™

Vgsth Max Id

3.7V @ 150μA

Number Of Elements

1

Ambalaj

Tube

Pulsed Drain Currentmax Idm

700A

Transistor Application

SWITCHING

Current Continuous Drain Id25

173A Tc

Rds On Max Id Vgs

3.3m Ω @ 100A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

230W

Uzunluk

10.67mm

Yükseklik

16.51mm

Turn On Delay Time

15 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

6V 10V

Avalanche Energy Rating Eas

554 mJ

Input Capacitance Ciss Max Vds

7020pF @ 25V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Weight

6.000006g

Yayın Yılı

2008