Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 120A Tc
- Rds On Max Id Vgs
- 3.3m Ω @ 70A, 10V
- Rise Time
- 34ns
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 120A
- Pulsed Drain Currentmax Idm
- 492A
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-220-3
- RoHS Durumu
- ROHS3 Compliant
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Breakdown Voltage
- 40V
- Input Capacitance Ciss Max Vds
- 3183pF @ 25V
- Turn Off Delay Time
- 33 ns
- Gate Charge Qg Max Vgs
- 93nC @ 10V
- Power Dissipation Max
- 99W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Recovery Time
- 22 ns
- Vgsth Max Id
- 3.9V @ 100μA
- Threshold Voltage
- 3V
- Yayın Yılı
- 2008
- Seri
- HEXFET®, StrongIRFET™
- Nominal Vgs
- 3 V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Uzunluk
- 10.67mm
- Vgs Max
- ±20V
- Montaj Tipi
- Through Hole
- Fet Type
- N-Channel
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Element Configuration
- Single
- Turn On Delay Time
- 11 ns
- Yükseklik
- 16.51mm
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