IRFB7430PBF

Specifications

Genişlik

4.83mm

Kurşunsuz

Lead Free

Power Dissipation

375W

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

100 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Uzunluk

10.67mm

Drive Voltage Max Rds On Min Rds On

6V 10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

760 mJ

Montaj Tipi

Through Hole

Case Connection

DRAIN

Yükseklik

16.51mm

Turn On Delay Time

32 ns

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

460nC @ 10V

Turn Off Delay Time

160 ns

Input Capacitance Ciss Max Vds

14240pF @ 25V

Drain To Source Breakdown Voltage

40V

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Number Of Elements

1

Ambalaj

Tube

Power Dissipation Max

375W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®, StrongIRFET™

Yayın Yılı

2008

Threshold Voltage

2.2V

Vgsth Max Id

3.9V @ 250μA

Recovery Time

52 ns

Transistor Application

SWITCHING

Montaj

Through Hole