Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj Tipi
- Through Hole
- Case Connection
- DRAIN
- Yükseklik
- 9.02mm
- Turn On Delay Time
- 13 ns
- Element Configuration
- Single
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Vgs Max
- ±20V
- Uzunluk
- 10.67mm
- Fabrika Tedarik Süresi
- 12 Weeks
- Kurşunsuz
- Lead Free
- Genişlik
- 4.83mm
- Jedec95 Code
- TO-220AB
- Power Dissipation
- 140W
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 62A Tc
- Rds On Max Id Vgs
- 13.5m Ω @ 37A, 10V
- Montaj
- Through Hole
- Rise Time
- 32ns
- Pulsed Drain Currentmax Idm
- 250A
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 62A
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 140W Tc
- Seri
- HEXFET®
- Nominal Vgs
- 2 V
- Yayın Yılı
- 2008
- Vgsth Max Id
- 4V @ 100μA
- Drain To Source Voltage Vdss
- 100V
- Threshold Voltage
- 2V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-220-3
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