IRFB4410ZPBF

Specifications

Seri

HEXFET®

Vgsth Max Id

4V @ 150μA

Number Of Elements

1

Ambalaj

Tube

Number Of Channels

1

Turn Off Delay Time

43 ns

Gate Charge Qg Max Vgs

120nC @ 10V

Drain To Source Breakdown Voltage

100V

Direnç

9MOhm

Kılıf / Paket

TO-220-3

Terminal

Through Hole

Radyasyon Dayanımı

No

Tepe Reflow Süresi (maks. sn)

30

Transistor Application

SWITCHING

Current Continuous Drain Id25

97A Tc

Rds On Max Id Vgs

9m Ω @ 58A, 10V

Fall Time Typ

57 ns

Fabrika Tedarik Süresi

12 Weeks

Tepe Reflow Sıcaklığı (°C)

250

Kurşunsuz

Lead Free

Genişlik

4.82mm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Montaj Tipi

Through Hole

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Nominal Vgs

4 V

Yayın Yılı

2004

Recovery Time

57 ns

Threshold Voltage

2V

Reach Svhc

No SVHC

JESD-609 Kodu

e3

Power Dissipation Max

230W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Kaplaması

MATTE TIN OVER NICKEL

Input Capacitance Ciss Max Vds

4820pF @ 50V

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant