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Specifications
- Terminal
- Through Hole
- Radyasyon Dayanımı
- No
- Pulsed Drain Currentmax Idm
- 57A
- Transistor Application
- AMPLIFIER
- Current Continuous Drain Id25
- 18A Tc
- Rds On Max Id Vgs
- 72.5m Ω @ 13A, 10V
- Vgsth Max Id
- 5V @ 250μA
- Number Of Elements
- 1
- Ambalaj
- Tube
- Drain To Source Breakdown Voltage
- 100V
- Direnç
- 72.5mOhm
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Turn Off Delay Time
- 14 ns
- Kılıf / Paket
- TO-220-3
- Montaj Tipi
- Through Hole
- Fet Type
- N-Channel
- Vgs Max
- ±20V
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Fall Time Typ
- 3.9 ns
- Jedec95 Code
- TO-220AB
- ECCN Kodu
- EAR99
- Genişlik
- 4.82mm
- Kurşunsuz
- Lead Free
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 18A
- Montaj
- Through Hole
- Rise Time
- 28ns
- Akım Değeri
- 18A
- Threshold Voltage
- 5V
- Recovery Time
- 62 ns
- Nominal Vgs
- 5 V
- Yayın Yılı
- 2005
- Power Dissipation Max
- 60W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 550pF @ 50V
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
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