IRFB41N15DPBF

Specifications

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Kurşunsuz

Contains Lead, Lead Free

Drainsource On Resistancemax

0.045Ohm

Genişlik

4.69mm

Fall Time Typ

14 ns

Fabrika Tedarik Süresi

14 Weeks

Vgs Max

±30V

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drain To Source Breakdown Voltage

150V

Gate Charge Qg Max Vgs

110nC @ 10V

Turn Off Delay Time

25 ns

Kılıf / Paket

TO-220-3

Vgsth Max Id

5.5V @ 250μA

Seri

HEXFET®

Ambalaj

Tube

Number Of Elements

1

Current Continuous Drain Id25

41A Tc

Rds On Max Id Vgs

45m Ω @ 25A, 10V

Transistor Application

SWITCHING

Terminal

Through Hole

Radyasyon Dayanımı

No

Power Dissipation

200W

Additional Feature

AVALANCHE RATED

Dual Supply Voltage

150V

Uzunluk

10.5156mm

Element Configuration

Single

Turn On Delay Time

16 ns

Yükseklik

8.763mm

Case Connection

DRAIN

Avalanche Energy Rating Eas

470 mJ

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

2520pF @ 25V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage Rated Dc

150V

Çalışma Sıcaklığı

-55°C~175°C TJ