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Support
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Specifications
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Montaj Tipi
- Through Hole
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.0045Ohm
- Genişlik
- 4.826mm
- Jedec95 Code
- TO-220AB
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Fall Time Typ
- 88 ns
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 4.5m Ω @ 75A, 10V
- Current Continuous Drain Id25
- 120A Tc
- Pulsed Drain Currentmax Idm
- 670A
- Radyasyon Dayanımı
- No
- Terminal
- Through Hole
- Contact Plating
- Tin
- Kılıf / Paket
- TO-220-3
- Turn Off Delay Time
- 78 ns
- Gate Charge Qg Max Vgs
- 210nC @ 10V
- Drain To Source Breakdown Voltage
- 100V
- Ambalaj
- Tube
- Number Of Elements
- 1
- Seri
- HEXFET®
- Vgsth Max Id
- 4V @ 250μA
- Uzunluk
- 10.66mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- DRAIN
- Yükseklik
- 16.51mm
- Turn On Delay Time
- 25 ns
- Element Configuration
- Single
- Power Dissipation
- 370W
- Dual Supply Voltage
- 100V
- Rise Time
- 67ns
- Montaj
- Through Hole
- Continuous Drain Current Id
- 180A
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
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