IRFB4019PBF

Specifications

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

17A

Rise Time

13ns

Montaj

Through Hole

Threshold Voltage

4.9V

Recovery Time

96 ns

Yayın Yılı

2006

Nominal Vgs

4.9 V

Power Dissipation Max

80W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

800pF @ 50V

Max Junction Temperature Tj

175°C

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Turn On Delay Time

7 ns

Yükseklik

19.8mm

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.6426mm

Dual Supply Voltage

150V

Power Dissipation

80mW

Terminal

Through Hole

Radyasyon Dayanımı

No

Current Continuous Drain Id25

17A Tc

Rds On Max Id Vgs

95m Ω @ 10A, 10V

Transistor Application

AMPLIFIER

Vgsth Max Id

4.9V @ 50μA

Ambalaj

Tube

Number Of Elements

1

Direnç

95MOhm

Drain To Source Breakdown Voltage

150V

Turn Off Delay Time

12 ns

Gate Charge Qg Max Vgs

20nC @ 10V

Number Of Channels

1

Kılıf / Paket

TO-220-3