Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 47 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Kurşunsuz
- Lead Free
- Genişlik
- 4.826mm
- Jedec95 Code
- TO-220AB
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- Montaj Tipi
- Through Hole
- Vgs Max
- ±20V
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Seri
- HEXFET®
- Vgsth Max Id
- 5V @ 250μA
- Number Of Elements
- 1
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 91nC @ 10V
- Turn Off Delay Time
- 29 ns
- Drain To Source Breakdown Voltage
- 200V
- Direnç
- 54Ohm
- Kılıf / Paket
- TO-220-3
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 54m Ω @ 26A, 10V
- Current Continuous Drain Id25
- 43A Tc
- Dual Supply Voltage
- 200V
- Power Dissipation
- 320W
- Case Connection
- DRAIN
- Yükseklik
- 9.017mm
- Turn On Delay Time
- 16 ns
- Element Configuration
- Single
- Avalanche Energy Rating Eas
- 460 mJ
- Drive Voltage Max Rds On Min Rds On
- 10V
- Uzunluk
- 10.668mm
- Nominal Vgs
- 5 V
- Yayın Yılı
- 2002
- Recovery Time
- 240 ns
- Threshold Voltage
- 5V
- Akım Değeri
- 38A
- Reach Svhc
- No SVHC
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