IRFB3806PBF

Specifications

Genişlik

4.82mm

Kurşunsuz

Lead Free

Power Dissipation

71W

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

47 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Uzunluk

10.6426mm

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Case Connection

DRAIN

Yükseklik

9.017mm

Turn On Delay Time

6.3 ns

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Turn Off Delay Time

49 ns

Gate Charge Qg Max Vgs

30nC @ 10V

Drain To Source Breakdown Voltage

60V

Input Capacitance Ciss Max Vds

1150pF @ 50V

Direnç

15.8MOhm

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Number Of Elements

1

Ambalaj

Tube

Power Dissipation Max

71W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Yayın Yılı

2008

Threshold Voltage

4V

Vgsth Max Id

4V @ 50μA

Recovery Time

33 ns

Transistor Application

SWITCHING

Current Continuous Drain Id25

43A Tc