IRFB33N15DPBF

Specifications

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

3.8W Ta 170W Tc

Yayın Yılı

2000

Nominal Vgs

5.5 V

Akım Değeri

33A

Threshold Voltage

5.5V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Voltage Rated Dc

150V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

2020pF @ 25V

Rise Time

38ns

Montaj

Through Hole

Pin Sayısı

3

Continuous Drain Current Id

33A

Operating Mode

ENHANCEMENT MODE

Dual Supply Voltage

150V

Power Dissipation

3.8W

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

15.24mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

13 ns

Uzunluk

10.5156mm

Ambalaj

Tube

Number Of Elements

1

Seri

HEXFET®

Vgsth Max Id

5.5V @ 250μA

Kılıf / Paket

TO-220-3

Turn Off Delay Time

23 ns

Gate Charge Qg Max Vgs

90nC @ 10V

Direnç

56Ohm

Drain To Source Breakdown Voltage

150V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

33A Tc

Rds On Max Id Vgs

56m Ω @ 20A, 10V

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

14 Weeks